With the booming of modern industries, global energy consumption has increased year by year. Nowadays, motor vehicle pollution has become an important source of air pollution and an important cause of ash and photochemical smog pollution. The urgency of motor vehicle pollution prevention and control has become increasingly prominent, and energy conservation and emission reduction has become a major issue in the development of the automotive industry. Therefore, vigorously developing new energy vehicles is a strategic measure to achieve energy conservation and emission reduction and promote the sustainable development of the automotive industry.
At present, the electric drive parts of EV (Electric Vehicle) and HEV (Hybrid Electric Vehicle) are mainly composed of silicon (Si) based power devices. With the development of electric vehicles, higher requirements have been placed on the miniaturization and weight reduction of electric drives. However, due to material limitations, traditional Si-based power devices have approached or even reached the intrinsic limits of their materials in many respects. Therefore, various automotive manufacturers have high hopes for a new generation of silicon carbide (SiC) power devices.

Third-generation semiconductors, represented by silicon carbide, have significant advantages over traditional semiconductor materials such as monocrystalline silicon and gallium arsenide, such as high thermal conductivity, high breakdown field strength, high saturation electron drift rate, and high bonding energy, high chemical stability, strong radiation resistance, etc. These advantages determine that silicon carbide has an irreplaceable position in many fields. The advantages of SiC are mainly as follows:
(1) SiC has a high thermal conductivity (up to 4.9 W/cm•K), which is 3.3 times that of Si. Therefore, the SiC material has a good heat dissipation effect. In theory, SiC power devices can operate at temperatures of 175 ° C, making them suitable for high temperature devices.
(2) SiC has a high breakdown field strength, which is 10 times that of Si, and is therefore suitable for making high-production, high-power, high-current devices.
(3) SiC has a high saturation electron drift rate, which is twice that of Si. Its high field processing capability is strong, so SiC materials are suitable for high frequency devices.
In summary, the potential of silicon carbide devices in automotive industry is enormous. SiC devices can significantly reduce the size, weight and cost of power systems while increasing power density and system efficiency. This makes it an ideal device for EV and HEV electric drives and will revolutionize the electric drive system of electric vehicles.
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